AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
6
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
TYPICAL CHARACTERISTICS
30 ?35ηD
0
35
1
?65
?30
15 ?50Gps
20 ?45ACPR
IM3
Pout, OUTPUT POWER (WATTS) AVG. (N?CDMA)
Figure 8. 2-Carrier N-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
VDD
= 28 Vdc, I
DQ
= 1200 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N?CDMA, 2.5 MHz @
25 ?401.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
10
10 ?55
5 ?60
220
105
109
100
Figure 9. MTTF Factor versus Junction Temperature
108
107
106
120 140 160 180 200
MTTF FACTOR (HOURS X AMPS
2
)
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2
for MTTF in a particular application.
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
N-CDMA TEST SIGNAL
f, FREQUENCY (MHz)
?100
0
Figure 10. 2-Carrier N-CDMA Spectrum
?10
?20
?30
?40
?50
?60
?70
?80
?90
?ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
?IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5 4.53
0
?1.5
?3
?4.5
?6
?7.5
7.5
(dB)
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